Published February 2008 | Version v1
Journal article

Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices

  • 1. National University of Kaohsiung, Department of Chemical and Materials Engineering, Kaohsiung, Taiwan (China)
  • 2. Tung-Fang Institute of Technology, Department of Electronics Engineering and Computer Science, Kaohsiung, Taiwan (China)
  • 3. National Sun Yat-Sen University, Department of Electrical Engineering, Kaohsiung, Taiwan (China)
  • 4. National Sun Yat-sen University, Department of Physics, Kaohsiung, Taiwan (China)

Description

In this study, the effects of oxygen gas plasma treatment on the surface of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated. The influence of oxygen plasma treatment on the crystal structure is developed by X-ray diffraction patterns and on the electrical characteristics are measured by the Al/BZT/Pt capacitor (metal-dielectric-metal) structure. Experimental results show that the capacitance increases and the leakage current density decreases as the oxygen plasma is treated on the BZT films. These results clearly indicate that the electrical characteristics of BZT films have effectively improved by means of the oxygen plasma surface treatment process. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-007-4277-1

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
90
Journal Issue
2
Journal Page Range
p. 329-331
ISSN
0947-8396
CODEN
APAMFC