Ridge waveguide fabrication by combining ion implantation and precise dicing on a LiNbO3 crystal

A ridge waveguide structure was prepared on a z-cut LiNbO3 crystal wafer by a combined process of ion implantation and precise dicing. The single-crystal LiNbO3 was implanted at room temperature using 3 MeV oxygen ions at a fluence of 5 × 1014 ions/cm2. After annealing to 200 °C, ridge structures were formed on the wafer surface by precise diamond blade dicing. Two different ridge widths, 8 and 10 μm, were chosen for comparison. The refractive index profile was reconstructed, and the near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. FD-BPM was used to simulate the guided mode profile. Transmission and reflection optical microscopy were used to obtain micro-photograph images of the waveguide structure