Published 1976 | Version v1
Report Open

Study of the defects introduced by boron ion implantation in silicon

Creators

Description

Thermally stimulated current measurements have been performed on P-N junctions formed by implantation of boron ions in silicon, for the characterization of the created defects and particularly for the introduced traps

Availability note (English)

MF available from INIS under the Report Number.

Abstract (French)

Des mesures de courant stimule thermiquement ont ete effectuees sur des jonctions P-N realisees par implantation d'ions bore dans le silicium, dans le but de caracteriser les defauts introduits par le bombardement ionique, et plus particulierement les niveaux pieges qui en resultent

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Additional details

Additional titles

Original title (French)
Etude des defauts introduits par implantation d'ions bore dans le silicium

Publishing Information

Imprint Pagination
83 p.
Report number
CRN-PN--76-2

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
7258414
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Thesis
Descriptors DEI
ACTIVATION ENERGY; BORON IONS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; IONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS