Published December 8, 2004 | Version v1
Journal article

Microstructure, Stress, and Stress-Induced Damages in Damascene Cu

  • 1. School of Materials Science and Engineering Seoul National University, Seoul (Korea, Republic of)

Description

The adoption of Cu and various low-k materials as metal lines and dielectrics has aggravated new stress-related problems such as huge voiding near a via and via-cracking. It is thought that these failures are originated from the inherent characteristics of damascene Cu lines and thermo-mechanical properties of low-k dielectrics. In this study, we analyzed the microstructure and stress of damascene Cu with various line width and dielectric materials. The relationship between microstructure, stress and mechanical properties of dielectric materials was described though the finite element analysis based on experimental data. Finally, the effect of microstructure and dielectric materials on stress-related failure mechanism was discussed

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
741
Journal Issue
1
Journal Page Range
p. 27-38
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
7. international workshop on stress-induced phenomena in metallization
Dates
14-16 Jun 2004
Place
Austin, TX (United States)

Optional Information

Notes
(c) 2004 American Institute of Physics