Published 1990
| Version v1
Miscellaneous
The effect of Si delta doping on Schottky barrier of Al: GaAs (100) interface
- 1. Minas Gerais Univ., Belo Horizonte, MG (Brazil). Inst. de Ciencias Exatas
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- O efeito da dopagem delta de Si sobre a barreira Schottky na interface Al: GaAs (100)
Publishing Information
- Imprint Title
- Proceedings of the 13. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 284 p.
- Journal Page Range
- p. 221.
Conference
- Title
- 13. National Meeting on Condensed Matter Physics.
- Dates
- 8-12 May 1990.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 22039733
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM; DOPED MATERIALS; GALLIUM ARSENIDES; SCHOTTKY DEFECTS; SILICON
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; GALLIUM COMPOUNDS; MATERIALS; METALS; PNICTIDES; POINT DEFECTS; SEMIMETALS; VACANCIES