Published October 5, 2015 | Version v1
Journal article

Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal

  • 1. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  • 2. National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Science, and Collaborative Innovation Center of Advanced Materials, Nanjing University, Nanjing 210093 (China)
  • 3. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)
  • 4. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
  • 5. Department of Materials, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

Description

We have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a〈110〉 comprised of a misfit dislocation along 〈112〉, and threading dislocations along 〈110〉 or 〈100〉. The misfit dislocation with Burgers vector of a〈110〉 can dissociate into two ½a〈110〉 partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films

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Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
14
Journal Page Range
p. 141605-141605.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

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