A new generation of single-ended van de Graaff accelerators for ion implantation and ion beam analysis

High voltage Engineering Europa B.V., The Netherlands developed a new generation of single-ended Van de Graaff accelerators for ion implantation and ion beam analysis. The new HVEE Van de Graaff accelerators are equipped with a unique (patented) ion source exchange system capable of handling four kinds of ion sources, mass separation at high voltage level and an X-ray intensity suppression system. The accelerators are able to produce a large variety of continuously, homogeneous and highly collimated mass-analyzed ion beams of several hundred μA in the energy range from 50 keV up to 1 MeV (1MV model) or from 100 keV up to 2 MeV (2 MV model), using singly charged ions, whereby the maximum energy can be easily reached and maintained without conditioning and virtually no X-rays are produced. Combined with two dedicated end stations (one for ion beam analysis using RBS, channeling, NRA and PIXE, and one with an automatic wafer-handling system for both single-wafer implantation and batch processing), these systems are very suitable for research as well as industrial applications. (orig.)