Published December 10, 2014
| Version v1
Journal article
Development of technology obtaining layers A3B5 compounds with variable bandgap for use in solar cells
Creators
- 1. Ioffe Institute, Saint-Petersburg (Russian Federation)
Description
Developed technology of obtaining layers with variable band gap by metalorganic vapor phase epitaxy (MOCVD). Made structure graded-gap layer with a thickness of 0.5 microns. Internal pulling electrical field the resultant structure was 5.8 kV/cm. In the resultant structure observed an increase circuit voltage due to the contribution of the gradient of the band gap
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/572/1/012051Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 572
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 16. Russian Youth Conference on Physics and Astronomy
- Acronym
- PhysicA.SPb/2013
- Dates
- 23-24 Oct 2013
- Place
- St Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47025363
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S14: SOLAR ENERGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ENERGY GAP; LAYERS; SOLAR CELLS; THICKNESS; VAPOR PHASE EPITAXY
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; DIMENSIONS; DIRECT ENERGY CONVERTERS; EPITAXY; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT; SURFACE COATING