Published April 1, 2005
| Version v1
Journal article
Ion-irradiation-induced stresses and swelling in amorphous Ge thin films
Creators
- 1. Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- 2. I. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)
Description
Mechanical stresses and morphology during growth and ion bombardment of amorphous Ge thin films are investigated by a combination of in situ stress measurements and molecular dynamics computer simulations. Strong compressive stresses are generated during irradiation that subsequently lead to severe swelling. The simulations indicate that interstitial-mediated viscous flow in combination with well-localized vacancy defects are the main ingredients responsible for the observed phenomena
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 71
- Journal Issue
- 13
- Journal Page Range
- p. 134102-134102.8
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36104642
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DEFECTS; GERMANIUM; ION BEAMS; IRRADIATION; MOLECULAR DYNAMICS METHOD; SEMICONDUCTOR MATERIALS; STRESSES; SWELLING; THIN FILMS; VACANCIES; VISCOUS FLOW
- Descriptors DEC
- BEAMS; CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEFORMATION; ELEMENTS; FILMS; FLUID FLOW; MATERIALS; METALS; POINT DEFECTS; SIMULATION
Optional Information
- Notes
- (c) 2005 The American Physical Society