Search for solute drag

Galvin et al. have shown that during resolidification subsequent to pulsed-laser melting, the solid-liquid interface slows down when it encounters a doped region. This was predicted by Aziz on the basis of theoretical considerations of free energy dissipation. Several possible sources of this velocity reduction have been identified. In order to distinguish between these effects and to make a quantitative comparison between theory and experiment, a system whose thermodynamic and thermophysical parameters are well known must be used; at present, Si-Ge is the only such semiconductor system. The authors are investigating this phenomenon by the ion implantation of Ge into Si and of Si into Ge. The interface velocity v has been measured by the transient conductance technique