Published 2006 | Version v1
Book Metadata-only

Characterization of hetrojunction ZnSe-Cds thin film through UV-VIS spectroscopy and R.B.S

Creators

  • 1. Department of Physics, University of Rajasthan, Jaipur (India)

Description

Thin film of ZnSe and CdS deposited on ITO glass substrate to make hetrojunction. This hetrojunction is characterized by UV-VIS spectroscopy, Rutherford Back Scattering and I-V measurements. It was suggested that after rapid thermal annealing interdiffusion occurs. The transmission spectra and optical band gap vary with interdiffusion. The Rutherford peak also observed to decrease after heat treatment. The I-V characteristic shows the variation in current with interdiffusion. (author)

Part of:
Proceedings of the DAE solid state physics symposium. V. 51

Additional details

Publishing Information

Publisher
Prime Time Education
Imprint Place
Mumbai (India)
ISBN
81-8372-030-7
Imprint Title
Proceedings of the DAE solid state physics symposium. V. 51
Imprint Pagination
1058 p.
Journal Page Range
p. 453-454

Conference

Title
51. DAE solid state physics symposium
Dates
26-30 Dec 2006
Place
Bhopal (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
38112567
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BAND THEORY; CADMIUM SULFIDES; HETEROJUNCTIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; THIN FILMS; ZINC SELENIDES
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; FILMS; INORGANIC PHOSPHORS; PHOSPHORS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS

Optional Information

Notes
7 refs., 4 figs.