Dielectric relaxation in compensated silicon

An investigation was made of the temperature and frequency dependences of the dielectric losses and of the electrical resistivity of silicon compensated by gold or platinum impurity centers or by radiation defects. The temperature dependences of the loss-angle tangent were recorded in the kilohertz frequency range maxima of relaxation origin. It was found that the dielectric relaxation time of these samples differed by several orders of magnitude from the Maxwellian relaxation time in the range of temperatures where the dielectric losses were observed. In the same range of temperatures the authors observed frequency dispersion of the real part of the complex conductivity. The appearacne of dielectric losses in the kilohertz range was attributed to a Maxwell-Wagnermechanism of space charge relaxation