Coulomb multielectron correlations in jump transport along quantum dot layers

The experimental data, related to the holes jump transport in the Ge/Si(001) in the two-dimensional quantum dot layers under the conditions of existing the far-ranging charge carriers, localized in the quantum dots (QD), are analyzed. Significant deviation of the jump conductivity parameters from the forecasts of the model of the single electron excitations in the coulomb glasses is identified. It is established that the determining role in the processes of the charge jump transfer between the QDs is played by the multiparticle Coulomb correlations of the holes, localized in the QD, leading to the essential decrease in the Coulomb barriers for the charge carrier tunneling