Published January 1973 | Version v1
Journal article Metadata-only

Rapid determination of semiconductor doping profiles in MOS structures

Creators

  • 1. Toshiba Research and Development Centre, Komukai, Kawasaki (Japan)

Description

no abstract available

Additional details

Identifiers

DOI
10.1016/0038-1101(73)90134-2;

Publishing Information

Journal Title
Solid-State Electronics
Journal Volume
16
Journal Issue
1
Series
Solid-State Electron.
Journal Page Range
124-126
ISSN
0038-1101

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
4057725
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ION IMPLANTATION; MOS TRANSISTORS; NONDESTRUCTIVE TESTING; PULSES
Descriptors DEC
ELECTRICAL PROPERTIES; MATERIALS TESTING; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS

Optional Information

Notes
Brief technical note.; Updated automatically by Metadata and Full-Text Enrichment Agent