Published 1998 | Version v1
Miscellaneous Open

Advances in the project about Pin type silicon radiation detectors

Description

The obtained advances in the collaboration project ININ-CINVESTAV about development of Pin type semiconductor radiation detectors here are presented. It has been characterized the response to different types of radiation made in CINVESTAV and INAOE. Measurements have been realized with different types of sensitive to charge preamplifiers determining the main characteristics which must be executed to be able to be employed with low capacitance detectors. As applications it has been possible to measure the irradiation time in a mammography machine and X-ray energy spectra have been obtained in the order of 14 KeV, with 4 KeV at ambient temperature. The future actions of project have been indicated and the possible applications of these detectors. (Author)

Availability note (English)

Available from INIS in electronic form

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Additional details

Additional titles

Original title (Spanish)
Avances en el proyecto sobre detectores de radiacion de silicio tipo PIN

Publishing Information

Imprint Pagination
6 p.
Report number
INIS-MX--857

Conference

Title
8. ININ-SUTIN Technical and Scientific Congress
Dates
2-4 Dec 1998
Place
Salazar, Estado de Mexico (Mexico)