Published 1988 | Version v1
Book Metadata-only

MOCVD growth of AlGaAs on structured substrates

Creators

  • 1. Univ. of Southern California, Los Angeles, CA (USA)

Description

Metalorganic chemical vapor deposition (MOCVD) of AlGaAs and GaAs on structured substrates is investigated. Mesas and grooves formed by wet-etching are overgrown by alternating thin (≤5000 angstrom) layers of AlGaAs and GaAs, allowing the observation of the time evolution of anisotropic growth near the etched features. Structures suitable for low-threshold lasers and low-loss waveguides are described and preliminary device performance is presented

Additional details

Additional titles

Subtitle (English)
A new tool for device design

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Lasers and Electro-optics Society annual meeting conference proceedings
Imprint Pagination
502 p.
Journal Page Range
p. 27-28.

Conference

Title
Lasers and Electro-Optics Society annual meeting.
Acronym
LEOS '88
Dates
2-4 Nov 1988.
Place
Santa Clara, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22000686
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; ANISOTROPY; CHEMICAL VAPOR DEPOSITION; ETCHING; GAIN; GALLIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; SEMICONDUCTOR LASERS; SPECIFICATIONS; STIMULATED EMISSION; SUBSTRATES; WAVEGUIDES
Descriptors DEC
ALUMINIUM COMPOUNDS; AMPLIFICATION; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; DEPOSITION; EMISSION; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; GALLIUM COMPOUNDS; LASERS; ORGANIC COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SURFACE COATING

Optional Information

Secondary number(s)
CONF-8811328--.