Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure

This paper presents the fabrication and electrical characterization of dual metal gated high electron mobility transistors (DMG-HEMTs) on AlGaN/GaN/SiC hetero-structure using oblique and normal angle deposition of Nickel and Titanium respectively as gate metals. A noteworthy advance in the device characteristics has been achieved including DC and pulse drain current, transconductance, ON-resistance. The upsurge in DC drain current and transconductance is ∼8% and 11% respectively. Pulse I–V measurements have been executed to evaluate the dynamic performance of DMG-HEMTs. Pulse I–V unveils significant improvement in drain lag, gate lag and current collapse in these devices which is due to the redistribution of electric field under the gate. (paper)