Published March 25, 2009 | Version v1
Journal article Metadata-only

High-performance piezoelectric gate diode of a single polar-surface dominated ZnO nanobelt

Creators

  • 1. Department of Materials Physics, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing, 100083 (China)
  • 2. State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083 (China)

Description

We report a piezoelectric gated diode that is composed of a single ZnO nanobelt with ± (0001) polar surfaces being connected to an indium tin oxide (ITO) electrode and an atomic force microscopy (AFM) tip, respectively. The electrical transport is controlled by both the Schottky barrier and the piezoelectric barrier modulated by the applied forces. The diode exhibits a high ON/OFF current ratio (up to 1.6 x 104) and a low threshold force of about 180 nN at 4.5 V bias. The electrical hysteresis is suggested to be attributed to be carrier trapping in the piezoelectric electric field.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/20/12/125201

Additional details

Identifiers

DOI
10.1088/0957-4484/20/12/125201;
PII
S0957-4484(09)97086-6;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
20
Journal Issue
12
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41012610
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; CARRIERS; ELECTRIC FIELDS; INDIUM OXIDES; NANOSTRUCTURES; PERFORMANCE; PIEZOELECTRICITY; SURFACES; TIN OXIDES; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; ELECTRICITY; INDIUM COMPOUNDS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; TIN COMPOUNDS; ZINC COMPOUNDS