Published February 16, 1988
| Version v1
Journal article
The electrical and optical properties of n-type HgIn2Te4
- 1. California Univ., Los Angeles (USA). Dept. of Electrical Engineering
- 2. Hughes Research Labs., Malibu, CA (USA)
Description
The electronic and optical properties of n-type HgIn2Te4 crystals are investigated. Carrier concentration, mobility, and resistivity are measured over the temperature range of 90 to 300 K. The room temperature carrier concentration is determined to be 1.5 x 1017 cm-3 with a mobility of 150 cm2/Vs. The ionization energy of the principle donor is determined to be 0.07 eV below the conduction band. The optical absorption coefficient is measured as a function of photon energy and indicates an indirect energy gap of 0.78 eV. Schottky barrier devices are formed on the material by evaporating gold as rectifying contact, and indium as an ohmic contact. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 105
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 563-566
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 19075796
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; CARRIER DENSITY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ENERGY GAP; EVAPORATION; GOLD; HALL EFFECT; INDIUM; INDIUM TELLURIDES; IONIZATION POTENTIAL; MERCURY TELLURIDES; N-TYPE CONDUCTORS; OPACITY; SCHOTTKY BARRIER DIODES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; INDIUM COMPOUNDS; MATERIALS; MERCURY COMPOUNDS; METALS; MOBILITY; OPTICAL PROPERTIES; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS