Published July 7, 2004 | Version v1
Journal article

Building a better unit cell: application to the Ag(111)/GaAs(110) system

  • 1. Department of Materials Science and Engineering, University of Florida, 154 Rhines Hall, PO Box 116400, Gainesville, FL 32611-6400 (United States)
  • 2. Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6032 (United States)

Description

First-principles computational techniques are often employed in studies of heterogeneous material interfaces. In many cases the interface to be studied is not coherent or is only coherent over a small length scale and approximations to the unit cell are necessary to carry out the calculations. Instead of using large, computationally intractable unit cells, artificial strain is frequently induced into one or both of the materials making up the interface. This paper presents calculated adhesion energies for a variety of unit cells all chosen to model the Ag(111)/GaAs(110) interface. The results show that the calculated adhesion energy of a single monolayer of Ag is more dependent on the type of artificial strain introduced into the system than it is on the absolute magnitude of strain, and that the surface density of Ag within the monolayer is a crucial factor. The optimized surface structures are also analysed

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/16/4661/cm4_26_002.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
16
Journal Issue
26
Journal Page Range
p. 4661-4676
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36004518
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ADHESION; CRYSTAL STRUCTURE; GALLIUM ARSENIDES; INTERFACES; SILVER; STRAINS; SURFACES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; GALLIUM COMPOUNDS; METALS; PNICTIDES; TRANSITION ELEMENTS