Bi-Sr-Ca-Cu-O film on sapphire grown by plasma-enhanced halide CVD

This paper reports on plasma-enhanced halide chemical vapor deposition (CVD) for Bi-Sr-Ca-Cu-O (BSCCO) thin film. Superconducting BSCCO films were fabricated on 3-inch diameter sapphire substrates without postannealing. The CVD apparatus has four source-gas generation cells in which source materials (BiCl3, SrI2, CaI2, and CuI) are evaporated or sublimated by heaters. Source gases are carried to the deposition chamber with helium. Oxidizing gases are O2 and/or H2O. The total pressure in the deposition chamber was 0.1 torr and the O2 partial pressure 0.01 torr. Deposition was a 2 Angstrom/min on sapphire