Published December 15, 2009
| Version v1
Journal article
Characterization of II-VI: 3d crystals with the help of ultrasonic technique
Creators
- 1. Russian State Vocational Pedagogical University, 11, Mashinistroiteley st., Ekaterinburg 620012 (Russian Federation)
- 2. Ural State Technical University, 19, Mira st., Ekaterinburg 620002 (Russian Federation)
- 3. Institute for Metal Physics, Ural Department of the Russian Academy of Sciences, 18, Sofia Kovalevskay st., Ekaterinburg 620041 (Russian Federation)
- 4. P.N. Lebedev Physical Institute of the Russian Academy of Sciences, 53, Leninskiy pr., Moscow 119991 (Russian Federation)
- 5. Institute of Solid State Chemistry, Ural Department of the Russian Academy of Sciences, 91, Pervomaiskay st., Ekaterinburg 620041 (Russian Federation)
Description
The temperature dependence of ultrasonic attenuation is proposed to use for determining concentration of dopand in a diluted magnetic semiconductor. This non-destructive method can be used for the crystal in which attenuation is caused by relaxation in the Jahn-Teller system. Attenuation coefficient per the impurity ion β obtained at a fixed frequency was introduced as a parameter characterizing sensitivity of the method. This parameter was determined for a number of II-VI: 3d semiconductors: ZnSe:Ni2+, ZnTe:Ni2+, ZnSe:V2+, ZnSe:Cr2+, and ZnSe:Fe2+ at 54 MHz. Anomalously large value of β=23x10-18 dB cm2 was found for Cr2+ in ZnSe.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.284Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.284;
- PII
- S0921-4526(09)01057-6;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 5244-5246
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089785
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATTENUATION; CHROMIUM ADDITIONS; CHROMIUM IONS; CRYSTALS; DOPED MATERIALS; IMPURITIES; IRON ADDITIONS; IRON IONS; JAHN-TELLER EFFECT; MAGNETIC SEMICONDUCTORS; NICKEL ADDITIONS; NICKEL IONS; N-TYPE CONDUCTORS; RELAXATION; SENSITIVITY; TEMPERATURE DEPENDENCE; TRANSITION ELEMENTS; ULTRASONIC TESTING; VANADIUM ADDITIONS; VANADIUM IONS; ZINC SELENIDES; ZINC TELLURIDES
- Descriptors DEC
- ACOUSTIC TESTING; ALLOYS; CHALCOGENIDES; CHARGED PARTICLES; CHROMIUM ALLOYS; ELEMENTS; IONS; IRON ALLOYS; MATERIALS; MATERIALS TESTING; METALS; NICKEL ALLOYS; NONDESTRUCTIVE TESTING; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TESTING; TRANSITION ELEMENT ALLOYS; VANADIUM ALLOYS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.