Published August 1993 | Version v1
Journal article Metadata-only

Development of novel architecture and assembly techniques for a detector unit for a silicon micro-vertex detector using the flip-chip bonding method

Creators

  • 1. KEK, National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)
  • 2. Osaka Univ., Toyonaka (Japan). Dept. of Physics
  • 3. Tsukuba Univ., Sakura (Japan). Inst. of Applied Physics

Description

The authors built full-size models of a detector unit for a silicon micro-vertex detector for the KEK B factory. The model consists of four dummy double-sided, double-metal silicon micro-strip detectors and two silicon end boards with dummy readout VLSIs mounted on both sides. In this trial the Flip-Chip Bonding (FCB) method, using an anisotropic conductive film is applied to both sides of the detector unit to bond 640 strips at a pitch of 50 μm. The structure using the FCB method successfully provides a new architecture for the detector unit of a vertex detector

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
40
Journal Issue
4 part 1
Journal Page Range
p. 552-556.
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference.
Dates
25-31 Oct 1992.
Place
Orlando, FL (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25019052
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BONDING; DESIGN; FABRICATION; FUNCTIONAL MODELS; MESON FACTORIES; SI SEMICONDUCTOR DETECTORS
Descriptors DEC
ACCELERATORS; JOINING; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS

Optional Information

Secondary number(s)
CONF-921005--.