Direct observation of atomic scale surface relaxation in ortho twin structures in GaAs by XSTM

We have studied the (110) GaAs surface of a structure containing ortho twins by cross-sectional scanning tunnelling microscopy and we have compared the experimental results with ab initio density functional theory calculations and STM simulations. Both experimentally and theoretically we find that the surface of different twin crystallites are significantly displaced with respect to each other, parallel to the twin boundary. This result is explained by a surface relaxation of the atoms in the (110) GaAs surface and the difference between the atomic configuration of the ortho twins.