TSV processing of Medipix3 wafers by CEA-LETI: a progress report
Creators
- 1. CERN, European Organization for Nuclear Research, 1211 Geneva 23 (Switzerland)
Description
The next generation of hybrid pixel detectors in particle physics experiments require reduced material budget, increased interconnection density and, ideally, they should be tileable to cover large areas seamlessly. These criteria cannot be fulfilled with present day interconnection techniques. As a result the particle physics community has recently put in a lot of effort to investigate and evaluate a variety of novel interconnection technologies. This paper focuses on describing a recently launched Through Silicon Via process development project with CEA-LETI. The project aims to use Medipix3 wafers and an existing ''via last'' TSV process made available by CEA-LETI to demonstrate the feasibility of TSVs on functional detector chips. The status of the project, TSV design and future plans are presented.
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/6/11/C11018Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 6
- Journal Issue
- 11
- Journal Page Range
- p. C11018
- ISSN
- 1748-0221
Conference
- Title
- Topical workshop on electronics for particle physics 2011
- Dates
- 26-30 Sep 2011
- Place
- Vienna (Austria)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44049341
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Progress Report
- Descriptors DEI
- CEA; DENSITY; DESIGN; PARTICLES; PROGRESS REPORT; SILICON
- Descriptors DEC
- DOCUMENT TYPES; ELEMENTS; FRENCH ORGANIZATIONS; NATIONAL ORGANIZATIONS; PHYSICAL PROPERTIES; SEMIMETALS