Published June 1979
| Version v1
Report
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Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report
Description
This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A99/MF A01.Files
11517072.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 885 p.
- Report number
- ORO--3912-101-112
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11517072
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARBON; COMPUTER CALCULATIONS; DEFECTS; HELIUM; IMPURITIES; INTERACTIONS; INTERSTITIALS; IRON; MATHEMATICAL MODELS; NICKEL; PAIR PRODUCTION; PHYSICAL RADIATION EFFECTS; RESEARCH PROGRAMS; SIMULATION; TUNGSTEN; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; METALS; NONMETALS; PARTICLE INTERACTIONS; PARTICLE PRODUCTION; POINT DEFECTS; RADIATION EFFECTS; RARE GASES; TRANSITION ELEMENTS