Published June 1979 | Version v1
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Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

Description

This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS., PC A99/MF A01.

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Additional details

Publishing Information

Imprint Pagination
885 p.
Report number
ORO--3912-101-112