Published May 1996 | Version v1
Journal article

In-plane orientation control of (001)YBa2Cu3O7-δ grown on (001)MgO by pulsed organometallic beam epitaxy

  • 1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
  • 2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)
  • 3. Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
  • 4. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Description

Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organometallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (<≅7x1014 Ba/cm2) the films grown [110]YBCO parallel[100]MgO. For thick BaO layers (approx-gt ≅11x1014 Ba/cm2) the films grow [100]YBCO parallel[100]MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described. copyright 1996 American Institute of Physics

Additional details

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
68
Journal Issue
21
Journal Page Range
p. 3037-3039.
ISSN
0003-6951
CODEN
APPLAB