Published March 1981 | Version v1
Journal article Metadata-only

Temperature dependence of photoconductivity in CdS irradiated with 10-MeV electrons

Creators

  • 1. Radiation Center of Osaka Prefecture, Sakai (Japan)

Description

The temperature dependences of carrier concentration and mobility in high-conducting CdS irradiated with 10-MeV electrons of fluences upto 1.3 x 1017 cm-2 have been studied. Measurement was made in a temperature region from 11 K to room temperature in the dark and under illumination. Irradiation produces at least two kinds of acceptor-type defects, one of which acts as sensitizing center, and donor-type defects with a depth of 30 meV under the bottom of the conduction band. (author)

Additional details

Publishing Information

Journal Title
Annu. Rep. Radiat. Cent. Osaka Prefect.
Journal Volume
21
Series
Annu. Rep. Radiat. Cent. Osaka Prefect.
Journal Page Range
29-32
ISSN
0474-7879

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
14734535
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Progress Report
Descriptors DEI
CADMIUM SULFIDES; CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRON BEAMS; EXPERIMENTAL DATA; IRRADIATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 01-10; MILLI EV RANGE; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
Descriptors DEC
BEAMS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY RANGE; INFORMATION; INORGANIC PHOSPHORS; LEPTON BEAMS; MATERIALS; MEV RANGE; MOBILITY; NUMERICAL DATA; PARTICLE BEAMS; PHOSPHORS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SULFIDES; SULFUR COMPOUNDS