An extended collection length model for the description of keV-electron induced degradation and thermal recovery of p-i-n solar cells
Description
The results of keV-electron degradation and annealing experiments obtained on a-Si:H based p-i-n solar cells are interpretated under inclusion of models developed earlier for the degradation of a-Si:H films and are placed in the framework of an extended collection length model. The strong degradation of the cell parameters jsc and FF due to considerable keV-electron irradiation can be explained quantitatively. This enables a crucial test of the validity of the mathematical models for the keV-electron induced effects developed so far. Furthermore the results of a detailed investigation of the thermal recovery of electron-degraded solar cells can be cleared up consistently. Some unresolved issues are discussed, and experiments to resolve these questions are proposed
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Twenty first IEEE photovoltaic specialists conference 1990 (Conference Record)
- Imprint Pagination
- 1673 p.
- Journal Page Range
- p. 1521-1525.
Conference
- Title
- 21. Institute for Electrical and Electronics Engineers (IEEE) photovoltaic specialists conference.
- Dates
- 21-25 May 1990.
- Place
- Kissimmee, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22052297
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S74: ATOMIC AND MOLECULAR PHYSICS; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRON BEAMS; IRRADIATION; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; SPECIFICATIONS; THERMAL CYCLING
- Descriptors DEC
- BEAMS; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; EQUIPMENT; LEPTON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SOLAR CELLS
Optional Information
- Secondary number(s)
- CONF-900542--.