X-ray synchrotron studies of nanostructure formation in high temperature - pressure treated silicon implanted with hydrogen

The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4x1016 cm-2 were investigated using synchrotron X-ray topographic methods rocking curve measurements. The high temperature-pressure processes included 10 h annealing at 450 oC, 650 oC, and 725 oC at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in black-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the ion implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects. (author)