Published January 2016 | Version v1
Journal article Metadata-only

Electronic and optical properties of GaAs/CaF2 films with variable thickness

Creators

  • 1. AS RU, Institute of Ion Plasma and Laser Technologies, Tashkent (Uzbekistan)

Description

In the work the escape depth of the true secondary and photoelectron emissions from GaAs nanofilms with different thickness deposited on Ca F2 surface has been determined and the optical properties of these films have been investigated. As the GaAs film thickness on Ca F2 increases from 0 to 400 A the index of light refraction grows in 2 times and reflection coefficient in 3 times. It is found that the transition layer with thickness of 130-150 A. is formed on the GaAs/Ca F2 system interface. (authors)

Additional details

Additional titles

Original title (Russian)
Электронные и оптические свойства пленок GaAs/CaF<суб>2</суб> переменной толщины

Publishing Information

Journal Title
Uzbekiston Fizika Zhurnali
Journal Volume
18
Journal Issue
1
Journal Page Range
p. 33-38
ISSN
1025-8817

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
49043216
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ANNEALING; AUGER ELECTRON SPECTROSCOPY; CALCIUM FLUORIDES; FILMS; GALLIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; OPTICAL PROPERTIES; REFLECTION; REFRACTION; SURFACES; THICKNESS; VISIBLE RADIATION
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CALCIUM COMPOUNDS; CALCIUM HALIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; EPITAXY; FLUORIDES; FLUORINE COMPOUNDS; GALLIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HEAT TREATMENTS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SPECTROSCOPY

Optional Information

Notes
12 refs., 2 figs., 1 tab.