Optimization of sol-gel derived PZT thin films by the incorporation of excess PBO

This paper reports on a series of PZT precursor solutions that was prepared which incorporated excess PbO to give the composition Pb1+xZr0.53Ti0.47O3+x, where 0 ≤ x ≤ 0.3. These solutions were spin coated on platinized Si wafers and fired at elevated temperatures up to 750C for 30 mins. After crystallization into single-phase perovskite, the films were studied using XRD, optical microscopy and electrical characterization techniques (hysteresis loops and dielectric properties). It was found that the presence of excess PbO significantly improved the PZT films in terms of phase assemblage, microstructure and electrical properties. Under optimized conditions, films with dielectric constants of around 3000 can be obtained