DEPFET sensor with intrinsic signal compression developed for use at the XFEL free electron laser radiation source
- 1. MPI Halbleiterlabor, Muenchen (Germany)
- 2. PNSensor GmbH, Otto Hahn Ring 6, 81739 Muenchen (Germany)
- 3. Max-Planck-Institut fuer extraterrestrische Physik, Garching (Germany)
Description
A new DEPFET detector-amplifier structure with strongly non-linear characteristics is presented. It will be used as basic element of an X-ray pixel detector at the new XFEL free electron laser radiation source to be constructed in Hamburg, Germany, providing at the same time single X-ray photon detection and high dynamic range even when operated at readout frequency up to 5 MHz. This is possible due to the new detector concept that adds to the excellent DEPFET properties - combined function of detector amplifier and data storage, full sensitivity over whole bulk, non-destructive readout, low serial noise and absence of reset noise - the new features of very large charge handling capability and signal compression. Concept and design will be presented and properties demonstrated by extended computer simulations.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2010.03.002Additional details
Identifiers
- DOI
- 10.1016/j.nima.2010.03.002;
- PII
- S0168-9002(10)00552-8;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 624
- Journal Issue
- 2
- Journal Page Range
- p. 528-532
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 11. european symposium on semiconductor detectors
- Dates
- 7-11 Jun 2009
- Place
- Wildbad Kreuth (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42074974
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMPLIFICATION; AMPLIFIERS; COMPRESSION; COMPUTERIZED SIMULATION; DEPLETION LAYER; FIELD EFFECT TRANSISTORS; FREE ELECTRON LASERS; MHZ RANGE; NOISE; PHOTONS; P-TYPE CONDUCTORS; RADIATION SOURCES; READOUT SYSTEMS; SENSITIVITY; SENSORS; SI SEMICONDUCTOR DETECTORS; X RADIATION; X-RAY DETECTION
- Descriptors DEC
- BOSONS; DETECTION; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FREQUENCY RANGE; IONIZING RADIATIONS; LASERS; LAYERS; MASSLESS PARTICLES; MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SIMULATION; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.