Infrared electroluminescence from erbium-doped spark-processed silicon

The infrared (IR) electroluminescence (EL) of erbium-doped spark-processed silicon (sp-Si) was investigated. For this, a device was constructed which consisted of a silicon wafer on which an erbium layer was vapor deposited, followed by spark-processing and rapid thermal annealing for 15 min at 900 deg. C in air. The metallization consisted of a 200 nm Ag layer (above the spark-processed area) and a 50 nm thick Al film (on the 'back side'), containing a window through which the light could escape. Maximal light emission occurred near 1.55 μm, that is, at a wavelength where commonly used fiber optical materials have their minimum in energy loss. The processing parameters for most efficient light emission were an Er thickness of 200-300 nm, a spark-processing time of about 30 s, an n-type Si wafer having a low (3-5 Ω cm) resistivity, an operating temperature near room temperature, and an operating voltage between 25 and 40 V under reverse bias. The results are interpreted by postulating an energy transfer from sp-Si to the Er3+ ions involving the first excited state 4I13/2 to ground state 4I15/2. Further, impact excitation and hot electrons that are accelerated into the erbium doped sp-Si by the applied field (100 kV/cm) are considered