The effect of encapsulation on the annealing behaviour of Mg- and Al-implanted silicon

The effect of Si encapsulation on the annealing behaviour of Mg- and Al-implanted silicon has been investigated in the temperature ranges 400-10000C and 500-9000C for Mg and Al, respectively. In a series of isochronal and isothermal annealings, differences in the redistribution of Al and Mg profiles in silicon were observed between the cases of encapsulated and non-encapsulated specimens. The interface seems to play an important role in the annealing behaviour of the implanted species. The implanted impurity concentration profiles were determined by means of the nuclear resonance broadening (NRB) method. (orig.)