To the high-dose effect under the ion implantation of silicon

In the case of ion implantation of phosphorus in silicon, some experiments are carried out in order to clear up mechanisms of the high-dose effect. On the ground of experimental data, a conclusion is drawn that the effect is caused by weakening interatomic bonds in a heavy doped with phosphorus amorphous silicon and that the effect has a thermoradiative character. The interruption of the irradiation after achieving the amorphous dose results in a stabilization of the amorphous state