Epitaxial growth mechanism and physical properties of ultra thin films of La0.6Sr0.4MnO3
- 1. Joint Research Center for Atom Technology, Tsukuba (Japan)
- 2. Tokyo Inst. of Tech., Yokohama (Japan). Dept. of Innovative and Engineered Materials
- 3. Joint Research Center for Atomic Technology, Tsukuba (Japan)
- 4. Univ. of Tokyo (Japan). Dept. of Applied Physics
Description
Thin films of La1-xSrxMnO3 (x = 0.4) were fabricated using pulsed laser deposition (PLD) methods. The surface morphology of the films was sensitively affected by oxygen pressure during deposition. At high oxygen pressure (∼ 150 mTorr), randomly aligned grains were nucleated on the epitaxial film. When the pressure was reduced to 100 mTorr, the epitaxial film had very smooth surface. Under this condition, the thickness dependence of resistivity and magnetization were analyzed. Even 6 nm thick film showed ferromagnetic metallic behavior. The AFM images of ultra thin films deposited on wet-etched SrTiO3 showed atomically flat terraces and 0.4 nm steps. The film growth mode can be tuned to either layer by layer or step flow by the deposition temperature
Additional details
Publishing Information
- Publisher
- Materials Research Society
- Imprint Place
- Warrendale, PA (United States)
- ISBN
- 1-55899-399-1
- Imprint Title
- Science and technology of magnetic oxides
- Imprint Pagination
- 375 p.
- Series
- Materials Research Society symposium proceedings, Volume 494
- Journal Page Range
- p. 9-14
Conference
- Title
- 1997 fall meeting of the Materials Research Society
- Dates
- 1-5 Dec 1997
- Place
- Boston, MA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30034582
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; LANTHANUM OXIDES; LASERS; MANGANESE OXIDES; MORPHOLOGY; PHYSICAL PROPERTIES; STRONTIUM OXIDES; THIN FILMS; VAPOR PHASE EPITAXY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DATA; EPITAXY; FILMS; INFORMATION; LANTHANUM COMPOUNDS; MANGANESE COMPOUNDS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; STRONTIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Funding organization
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
- Secondary number(s)
- CONF-971201--