Published July 15, 1987
| Version v1
Journal article
Channeling radiation from GaAs
- 1. Department of Electrical Engineering, Stanford University, Stanford, California 94305
Description
Channeling-radiation spectra have been obtained from a GaAs crystal with 16.9-MeV electrons and with 54.4-MeV electrons and positrons. Theoretical calculations are in reasonably good agreement with the experimental results
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 36
- Journal Issue
- 2
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 1259-1261
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18084376
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Descriptors DEI
- ELECTROMAGNETIC RADIATION; ELECTRON CHANNELING; GALLIUM ARSENIDES; MEV RANGE 10-100; POSITRON CHANNELING
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHANNELING; ENERGY RANGE; GALLIUM COMPOUNDS; MEV RANGE; RADIATIONS