Published November 30, 2001
| Version v1
Journal article
Memory effects of the multi-charge network model
Description
We propose a spin glass model which has interactions characterized by P kinds of charges carried by N kinds of particles. When the densities of the particles are assumed to be Ising spin variables, this model becomes a spin glass model which has an opposite interactional sign to the Hopfield model with P memorized patterns. The number of local minimum states and remanent magnetization are studied to clarify the memory effects of the model. We find that, as P/N decreases, both quantities tend to the maximum possible values of the thermodynamic limit. (author)
Availability note (English)
Available online at the Web site for the Journal of Physics. A, Mathematical and General (ISSN 4361-6447) http://www.iop.org/Additional details
Identifiers
- URL
- http://www.iop.org/;
Publishing Information
- Journal Title
- Journal of Physics. A, Mathematical and General
- Journal Volume
- 34
- Journal Issue
- 47
- Journal Page Range
- p. 10005-10012
- ISSN
- 0305-4470
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33021854
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S72: PHYSICS OF ELEMENTARY PARTICLES AND FIELDS;
- Descriptors DEI
- MAGNETIZATION; MULTICHARGED IONS; NETWORK ANALYSIS; P-N JUNCTIONS; SPIN GLASS STATE; THERMODYNAMIC PROPERTIES
- Descriptors DEC
- CHARGED PARTICLES; IONS; MAGNETIC MOMENTS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS