Published December 1975
| Version v1
Journal article
Room-temperature operation and threshold temperature dependence of LPE-grown In/sub x/Ga/sub 1-x/As homojunction lasers
- 1. Bell Telephone Laboratories, Holmdel, New Jersey 07733
Description
InGa/sub 1-x//subx/As homojunction lasers prepared by liquid-phase epitaxy have been operated from below 770K to room temperature. Lowest thresholds were J)=2000 A/cm2 at 770K and 290 000 A/cm2 at room temperature. The variation of threshold with temperature can be fit by either Japprox.T3 or Japprox.exp(T/670K) above approx.1500K, and by Japprox.T2.3 at lower temperatures
Additional details
Identifiers
- DOI
- 10.1063/1.321555;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 46
- Journal Issue
- 12
- Series
- J. Appl. Phys.
- Journal Page Range
- 5280-5282
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7240646
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- EPITAXY; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; OPERATION; SEMICONDUCTOR LASERS; THRESHOLD ENERGY
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ENERGY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent