Published 1981
| Version v1
Book
Capless annealing of ion implanted InP and GaAs for microwave devices
- 1. Naval Research Lab., Washington, DC (USA)
Description
A close contact annealing (CCA) technique is described. The technique has been used to anneal implanted InP and GaAs at temperatures up to 8000C and 10500C, respectively. 1017 cm-3 Si implanted layers in InP have been processed with CCA technique. 80 to 100% activations and near bulk mobilities have been obtained. Data on low-noise InP FETs fabricated with these layers is given. (author)
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- Bristol
- ISBN
- 0 85498 147 0
- Imprint Title
- Gallium arsenide and related compounds, 1980
- Imprint Pagination
- 753 p.
- Journal Issue
- n. 56
- Series
- Institute of Physics Conference Series.
- Journal Page Range
- p. 237-242.
Conference
- Title
- 8. international symposium on gallium arsenide and related compounds.
- Dates
- 22 - 24 Sep 1980.
- Place
- Vienna, Austria.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13670139
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CARRIER MOBILITY; CHARGE CARRIERS; DEPTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HALL EFFECT; INDIUM PHOSPHIDES; ION IMPLANTATION; SILICON IONS; SPATIAL DISTRIBUTION; VERY HIGH TEMPERATURE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; MOBILITY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TRANSISTORS