Published March 2007 | Version v1
Journal article

Effect of sputter deposition parameters on the characteristics of PZT ferroelectric thin films

  • 1. Department of Electronic Science and Technology, School of Electronics Information Engineering, Tianjin University, Tianjin, 300072 (China)

Description

This study examined the effect of process parameters on ferroelectric properties of Pb(Zr, Ti)O3 (PZT) thin films. Nano-particle PZT ferroelectric thin films were prepared on the Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering. Experiment parameters including sputtering power, sputtering air pressure, ratio of O2/Ar, underlay temperature and annealed temperature are analyzed by uniform design. Five levels are set up in suitable and precise range, quadratic regression equations of experiment factors versus experiment responses were set up by step regression. Analysis of variance revealed that developed models were adequate and there is an optimize potential in PZT ferroelectric thin films preparation process by RF-magnetron sputtering

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
61
Journal Issue
1
Journal Page Range
p. 115-119
ISSN
1742-6596

Conference

Title
International conference on nanoscience and technology
Dates
30 Jul - 4 Aug 2006
Place
Basel (Switzerland)