A comparison of multicomponent quantitative analysis methods for the determination of boron and phosphorous in BPSG films on silicon

Borophosphosilicate glass (BPSG) films are frequently used in silicon integrated circuits for multilevel interconnection coatings and for surface passivation to provide mechanical protection and improve electrical stability and reliability. BPSG films also act as getters of sodium and other metal ions impurities which might otherwise drift to the oxide/silicon interface and affect the electrical properties of the device. Many of these applications require careful control of the phosphorous and boron concentration in the glass film: consequently a rapid and precise measurement of these components is needed. Infrared analysis of BPSG films provides one non-destructive method for the determination of boron and phosphorous in BPSG films deposited on silicon. The BPSG analysis is done from the transmission spectra of silicon wafers coated with the BPSG film. Since heavily doped silicon exhibits continuous plasma absorption in the region where BPSG bands are present, the BPSG film should be deposited on silicon substrates having a resistivity of greater than 10 ohm-cm. A typical transmission spectrum of a BPSG film deposited on silicon is shown