Graphene-carbon nitride interface-geometry effects on thermal rectification: a molecular dynamics simulation
Creators
- 1. Mechanical and Aerospace Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Nur-Sultan 010000 (Kazakhstan)
Description
In this paper we expand our previous study on phonon thermal rectification (TR) exhibited in a hybrid graphene-carbon nitride system (G−C3N) to investigate the system's behavior under a wider range of temperature differences, between the two employed baths, and the effects of media-interface geometry on the rectification factor. Our simulation results reveal a sigmoid relation between TR and temperature difference, with a sample-size depending upper asymptote occurring at generally large temperature differences. The achieved TR values are significant and go up to around 120% for ΔT = 150 K. Furthermore, the consideration of varying media-interface geometries yields a non-negligible effect on TR and highlights areas for further investigation. Finally, calculations of Kapitza resistance at the G-C3N interface are performed for assisting us in the understanding of interface-geometry effects on TR. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/abe786Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 32
- Journal Issue
- 21
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53071313
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CARBON NITRIDES; GRAPHENE; HYBRIDIZATION; INTERFACES; KAPITZA RESISTANCE; MOLECULAR DYNAMICS METHOD; PHONONS; SIMULATION
- Descriptors DEC
- CALCULATION METHODS; CARBON; CARBON COMPOUNDS; ELEMENTS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; QUASI PARTICLES; THERMAL BOUNDARY RESISTANCE