Published May 21, 2021 | Version v1
Journal article

Graphene-carbon nitride interface-geometry effects on thermal rectification: a molecular dynamics simulation

  • 1. Mechanical and Aerospace Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Nur-Sultan 010000 (Kazakhstan)

Description

In this paper we expand our previous study on phonon thermal rectification (TR) exhibited in a hybrid graphene-carbon nitride system (G−C3N) to investigate the system's behavior under a wider range of temperature differences, between the two employed baths, and the effects of media-interface geometry on the rectification factor. Our simulation results reveal a sigmoid relation between TR and temperature difference, with a sample-size depending upper asymptote occurring at generally large temperature differences. The achieved TR values are significant and go up to around 120% for ΔT = 150 K. Furthermore, the consideration of varying media-interface geometries yields a non-negligible effect on TR and highlights areas for further investigation. Finally, calculations of Kapitza resistance at the G-C3N interface are performed for assisting us in the understanding of interface-geometry effects on TR. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/abe786

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
32
Journal Issue
21
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53071313
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CARBON NITRIDES; GRAPHENE; HYBRIDIZATION; INTERFACES; KAPITZA RESISTANCE; MOLECULAR DYNAMICS METHOD; PHONONS; SIMULATION
Descriptors DEC
CALCULATION METHODS; CARBON; CARBON COMPOUNDS; ELEMENTS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; QUASI PARTICLES; THERMAL BOUNDARY RESISTANCE