Phosphorus and boron diffusion in silicon from implanted deep layers
Creators
- 1. Centre National d'Etudes des Telecommunications (CNET), Centre de Recherches de Lannion, 22 (France)
Description
Ion implantation was used as a method of predeposition before diffusion. Boron and phosphorus ion profiles obtained from deep layers (at about 1μ depth) are presented with a boron implantation at 500keV of 1012 ions/cm2 and a phosphorus implantation at 1MeV of 1015 ions/cm2. The profiles presented were obtained from electric measurements only: c(v) measurements for low doses (1012ions/cm2) and Hall measurements followed by anodic oxidation in the case of high concentrations. The diffusion coefficient for boron at 1000 deg C appears to be noticeably higher than that observed with conventional diffusion. In the case of phosphorus implantation where the dose is sufficient to create an amorphous layer, the profiles show an anomalous diffusion in the strongly damaged zone
Abstract (French)
On a utilise l'implantation ionique comme methode de predepot pour une diffusion. On presente des profils d'ions de bore et de phosphore obtenus a partir de couches enterrees a environ 1μ de la surface (bore implante a 500keV, 1012 ions/cm2 et phosphore a 1 MeV, 1015 ions/cm2). Les profils presentes resultent uniquement de mesures electriques: mesures c(v) pour les faibles doses (1012 ions/cm2) et mesures d'effet Hall suivies d'oxydations anodiques pour les fortes concentrations. On note que pour le bore, le coefficient de diffusion a 1000 deg C est notablement plus eleve que les valeurs observees pour une diffusion classique. Dans le cas d'implantation de phosphore, ou la dose est suffisante pour creer une couche amorphe, les profils montrent une diffusion anormale dans la zone fortement endommageeAdditional details
Additional titles
- Original title (French)
- Diffusion du phosphore et du bore dans le silicium a partir de couches enterrees obtenues par implantation
Publishing Information
- Publisher
- Societe Francaise du Vide.
- Imprint Place
- Paris, France
- Imprint Title
- Electron and ion beam processes applications. 4. International congress AVISEM 74. Toulouse, October 8-11, 1974
- Imprint Pagination
- p. 133-140.
Conference
- Title
- 4. International congress AVISEM 74. Application of electronic and ionic processes.
- Dates
- 08 Oct 1974.
- Place
- Toulouse, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 7241434
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BORON IONS; DIFFUSION; ION IMPLANTATION; PHOSPHORUS IONS; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DISTRIBUTION; ELEMENTS; HEAT TREATMENTS; IONS; SEMIMETALS
Optional Information
- Notes
- Imprint:Supplement to the journal Le Vide les Couches Minces no.171.;Application des processus electroniques et ioniques. 4. Congres international AVISEM 74. Toulouse, 8-11 octobre 1974.