Published February 2007 | Version v1
Journal article

Semiconducting and passive film properties of nitrogen-containing type 316LN stainless steels

  • 1. Corrosion Science and Technology Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)
  • 2. Water and Steam Chemistry Laboratory, BARC Facilities, Kalpakkam 603 102 (India)

Description

The semiconducting property of passive films of nitrogen-containing type 316LN stainless steels in different electrolytic media (0.5M NaCl, borate buffer and borate buffer+0.5M NaCl) was investigated by electrochemical impedance spectroscopy (EIS). The nitrogen effect on the chemical composition of the passive films was investigated using X-ray photoelectron spectroscopy (XPS). Based on capacitance results, the semiconducting parameters obtained from the Mott-Schottky plots indicated a decrease in the donor and acceptor density (ND and NA) with increase in nitrogen content, and variation in the flat band potential (EFB), depending on the electrolytic media. Thus indicating that the oxide layers of the passive film are modified by nitrogen addition. The presence of nitrogen and NH4+ in the passive film was confirmed by the XPS analysis of the passive film. Cyclic polarization for pitting and repassivation corrosion studies indicated a decrease in hysteresis loop with increase in nitrogen content in 0.5M NaCl solution. In the highest nitrogen-containing alloy (0.556wt.% N), the hysteresis loop was small and negligible indicating that the pit initiation is minimum in this alloy. Based on the results obtained, an attempt was made to correlate the semiconducting nature of the passive films with pitting corrosion resistance

Additional details

Identifiers

DOI
10.1016/j.corsci.2006.05.041;
PII
S0010-938X(06)00181-8;

Publishing Information

Journal Title
Corrosion Science
Journal Volume
49
Journal Issue
2
Journal Page Range
p. 481-496
ISSN
0010-938X
CODEN
CRRSAA

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.