Published March 4, 2010 | Version v1
Journal article

The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystals

  • 1. Ivan Franko Drogobych State Pedagogical University, 24 Ivan Franko str., 82100, Drogobych (Ukraine)
  • 2. V Ye Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 pr. Nauki, 03028, Kyiv (Ukraine)
  • 3. Yurij Fed'kovych National University, 2 Kotsyubynsky str., 274012, Chernivtsi (Ukraine)

Description

The Hall effect and electrical conductivity in the range of 310–420 K as well as room-temperature optical transmission of semi-insulating p-type CdTe:Cl crystals grown by the modified physical vapor transport method have been investigated. An anomalous change of their electrical parameters and mid IR-transmittance in consequence of low-temperature short-time annealing and also a non-typical temperature dependence of hole Hall mobility have been observed. The observed peculiarities are explained by inhomogeneous spatial dopant distribution within the crystals followed by the formation of chlorine-involved clusters, precipitates and inclusions that are modified during heating

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/25/3/035001

Additional details

Identifiers

DOI
10.1088/0268-1242/25/3/035001;
PII
S0268-1242(10)29184-8;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
25
Journal Issue
3
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET