Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol-gel route
Creators
- 1. Key Laboratory of Engineering Dielectrics and Its Application (Harbin University of Science and Technology), Ministry of Education (China)
- 2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)
Description
It is shown that different highly oriented Pb(Zr0.52,Ti0.48)O3 films can be obtained on Pt/Ti/SiO2/Si substrate using a sol-gel technique. The effects of pyrolysis temperature on the orientation, phase composition and ferroelectric properties of the films are investigated. It is found the ferroelectric hysteresis loops of (1 1 1)-oriented film, (1 1 1) and (1 0 0) mix-oriented film can both be saturated when the external electric field is large enough, whereas the hysteresis loop of (1 0 0)-oriented film is difficult to saturate. The analysis of X-ray diffraction indicated the possibility of different phase composition in different oriented films under large film residual stress. Higher remnant polarization (53 μC/cm2) for (1 0 0)-oriented film can be attributed to its more tetragonal phase composition, which results in that the in-plane domain switching can continuously occur with external electric field increasing.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2010.03.082Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2010.03.082;
- PII
- S0169-4332(10)00373-9;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 256
- Journal Issue
- 16
- Journal Page Range
- p. 5120-5125
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44018200
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC FIELDS; FERROELECTRIC MATERIALS; HYSTERESIS; PHASE TRANSFORMATIONS; POLARIZATION; PYROLYSIS; PZT; RESIDUAL STRESSES; SILICON OXIDES; SOL-GEL PROCESS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; DECOMPOSITION; DIELECTRIC MATERIALS; DIFFRACTION; FILMS; LEAD COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SILICON COMPOUNDS; STRESSES; THERMOCHEMICAL PROCESSES; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.