Facile growth of ZnO nanorod arrays by a microwave-assisted solution method for oxygen gas sensing
Description
This work reports the growth of vertically aligned and single-crystalline zinc oxide (ZnO) nanorod arrays on the silicon (Si) substrate using a microwave-assisted solution method. The x-ray diffraction and selected area electron diffraction patterns indicated that the ZnO nanorods were grown preferentially oriented in the (001) direction and have single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy results showed that the length and diameter of the well aligned rods were about ∼ 500 nm and ∼ 80 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The gas-sensing properties of the ZnO nanorod arrays for oxygen with different concentration were measured at room temperature. It was found that the value of resistance increased with the increase of oxygen gas concentration in the chamber. The ZnO nanorod arrays exhibited high sensitivity and rapid response–recovery characteristics to oxygen gas and can detect low concentration as 5, 10, 15 and 20 parts per million. - Highlights: • ZnO nanorod arrays using microwave irradiation have been prepared. • Preferential growth along (001) direction. • The sensitivity is linearly proportional to the oxygen concentration
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.03.099Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.03.099;
- PII
- S0040-6090(13)00559-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 547
- Journal Page Range
- p. 168-172
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 4. international conference on microelectronics and plasma technology
- Acronym
- ICMAP 2012
- Dates
- 4-7 Jul 2012
- Place
- Jeju (Korea, Republic of)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46128452
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CONCENTRATION RATIO; CRYSTAL GROWTH; ELECTRON DIFFRACTION; FIELD EMISSION; IRRADIATION; MICROWAVE RADIATION; MONOCRYSTALS; NANOSTRUCTURES; OXYGEN; RAMAN EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; MICROSCOPY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SCATTERING; SEMIMETALS; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.