(In)GaSb/AlGaSb quantum wells grown on Si substrates
- 1. National Institute of Information and Communications Technology (NICT), 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)
- 2. Doshisha University, 1-3, Tatara-Miyakodani, Kyotanabe-shi, Kyoto 610-0321 (Japan)
Description
We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2006.07.131;
- PII
- S0040-6090(06)00952-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 10
- Journal Page Range
- p. 4467-4470
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 3. International conference on materials for advanced technologies: Symposium J-III-V- Semiconductors for microelectronic and optoelectronic applications
- Acronym
- ICMAT 2004
- Dates
- 3-8 Jul 2005
- Place
- Singapore (Singapore)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39018682
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; ALUMINIUM COMPOUNDS; GALLIUM ANTIMONIDES; GROUND STATES; INDIUM COMPOUNDS; MILLI EV RANGE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SCHROEDINGER EQUATION; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; CRYSTAL GROWTH METHODS; DIFFERENTIAL EQUATIONS; EMISSION; ENERGY; ENERGY LEVELS; ENERGY RANGE; EPITAXY; EQUATIONS; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PARTIAL DIFFERENTIAL EQUATIONS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE; WAVE EQUATIONS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.